sot-89 -3l plastic-encapsulate transistors b772 transistor pnp marking:b772 feature low speed switching maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage - 6 v i c collector current -continuous -3 a p c collector power dissipation 0.5 w r ? ja thermal resistance, j unction to ambient 25 0 /w t j junction temperature 150 t stg storage temperature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =-100 a ,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -10ma , i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e = -100 a,i c =0 - 6 v collector cut-off current i cbo v cb = -40v, i e =0 -1 a collector cut-off current i ceo v ce =-30v, i b =0 -10 a emitter cut-off current i ebo v eb =-6v, i c =0 -1 a dc current gain h fe v ce = -2v, i c = -1a 60 400 collector-emitter saturation voltage v ce(sat) i c =-2a, i b = -0.2a -0.5 v base-emitter saturation voltage v be(sat) i c =-2a, i b = -0.2a -1.5 v transition frequency f t v ce = -5v, i c =-0.1a f =10mhz 5 0 mhz classification of h fe rank r o y gr range 60-120 100-200 160-320 200-400 1 2 3 sot-89 -3l 1. base 2 . colletor 3 . emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,dec,2013
0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 -300 -400 -500 -600 -700 -800 -900 -1000 -1100-1200 -0.1 -1 -10 -100 -1000 -1 -10 -100 -1000 10 100 1000 10000 -1 -10 -100 -1000 -300 -600 -900 -1200 -1500 -10 -100 10 100 -1 -10 -100 -1000 -1 -10 -100 -1000 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 f t ?? i c static characteristic b772 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (w) i c ?? v be h fe ?? i c -3000 common emitter v ce = -2v base-emmiter voltage v be (mv) collector current i c (ma) t a = 2 5 t a = 1 00 -3000 common emitter v ce = -2v t a =100 t a =25 dc current gain h fe collector current i c (ma) -3000 =10 v besat ?? i c base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 -4.23 200 common emitter v ce =-5v t a =25 collector current i c (ma) transition frequency f t (mhz) -3000 =10 v cesat ?? i c t a =100 t a =25 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) -6.0ma common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) -7.5ma -6.75ma -5.25ma -2.25ma -3.75ma -4.5ma -3.0ma -1.5ma i b =-0.75ma 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,dec,2013
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